Infineon Launches World's Thinnest Silicon Power Wafer, Pushing Technology Limits

Following the announcement of the world's first 300 mm gallium nitride (GaN) power semiconductor wafers and the completion of the world's largest 200 mm silicon carbide (SiC) power semiconductor wafer fab in Kulim, Malaysia, Infineon has once again achieved new milestones in the field of semiconductor manufacturing technology. Infineon has made a breakthrough in the handling and processing of the thinnest silicon power wafers in history, with a diameter of 300 mm and a thickness of 20 μm. The thickness is only a quarter of a hair's breadth, and half the thickness of today's state-of-the-art 40-60 μm wafers.