Infineon | Introducing the New HYPERRAM™ Memory Chip


Infineon Technologies has further improved its high bandwidth, low pin count memory solutions with the introduction of the new HYPERRAM™ 3.0 device, featuring a new 16-bit extended HyperBus™ interface that doubles the throughput to 800MBps. Featuring a new 16-bit extended HyperBus™ interface that doubles the throughput to 800MBps, with the introduction of the HYPERRAM™ 3.0 device, Infineon offers a complete portfolio of low pin-count, low-power, high-bandwidth memory products. The chip is ideally suited for applications requiring extended RAM memory, including video buffering, factory automation, artificial intelligence Internet of Things (AIoT) and automotive Vehicle to Vehicle (V2X), as well as applications requiring memo pads for data-intensive computing.
With nearly three decades of expertise in memory solutions, Infineon is pleased to bring another industry first to the market,” said Ramesh Chettuvetty, Senior Marketing and Applications Director, Automotive Electronics Business Unit, Infineon Technologies. The new HYPERRAM™ 3.0 memory solution offers a much higher data throughput per pin than existing technologies such as PSRAM and SDR DRAM. Its low-power characteristics enable lower power consumption without sacrificing throughput, making this memory ideal for industrial and IoT solutions.”
Infineon HYPERRAM™ is a PSRAM-based standalone volatile memory that provides a cost-effective add-on way to expand memory. Its data rate is comparable to that of SDR DRAM, but uses fewer pins and consumes less power. the HyperBus™ interface has a higher data throughput per pin, allowing the use of microcontrollers (MCUs) with fewer pins and PCBs with fewer layers, providing a less complex and more cost-optimized design solution for the target application.
With nearly three decades of expertise in memory solutions, Infineon is pleased to bring another industry first to the market,” said Ramesh Chettuvetty, Senior Marketing and Applications Director, Automotive Electronics Business Unit, Infineon Technologies. The new HYPERRAM™ 3.0 memory solution offers a much higher data throughput per pin than existing technologies such as PSRAM and SDR DRAM. Its low-power characteristics enable lower power consumption without sacrificing throughput, making this memory ideal for industrial and IoT solutions.”
Infineon HYPERRAM™ is a PSRAM-based standalone volatile memory that provides a cost-effective add-on way to expand memory. Its data rate is comparable to that of SDR DRAM, but uses fewer pins and consumes less power. the HyperBus™ interface has a higher data throughput per pin, allowing the use of microcontrollers (MCUs) with fewer pins and PCBs with fewer layers, providing a less complex and more cost-optimized design solution for the target application.
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